Department News
Thermal Design, Fabrication, and Imaging of MEMS and Microelectronic Structures
Seminar Date
2003-03-25
Author
박경시
Date
2003-03-25
Views
1713
1. 제 목 : Thermal Design, Fabrication, and Imaging of MEMS and Microelectronic Structures
2. 연 사 : 권 오 명 교수 (고려대학교 기계공학과, 조교수)
3. 일 시 : 2003년 4월 4일 (금) 16:00 - 17:00
4. 장 소 : 서울대 신공학관(301동) 1512호 세미나실
한양대 공업센터 4층 세미나실 (화상강의로 진행)
5. 내 용 :
For thermal sensor fabrication, there are two important advantages in reducing the sizes of the thermal sensors, high sensitivity and spatial resolution. This talk is devoted to design and fabrication of micro thermal sensors and their applications in MEMS and microelectronic structures.
Utilizing the high temperature sensitivity of bi-material micro-cantilevers, an uncooled micro-optomechanical infrared camera was developed. A focal plane array (FPA) whose design is based on thermal and mechanical optimization was fabricated using standard surface micromachining techniques. An optical readout that simultaneously measures deflections of the cantilever in all pixels with nanometer resolution and projects an intensity map on to our eye was developed.
A new non-destructive evaluation (NDE) technique of sub-surface structure on the sub-micrometer scale using thermal waves was developed. First, the validity and accuracy of the technique was established. Then, the technique was applied to the non-destructive evaluation (NDE) of sub-surface structure at sub-micrometer scale resolution. To demonstrate the effectiveness of the technique the phase lag and amplitude distributions on a sample containing two levels of metal interconnect bridged by a via were measured with wave frequencies up to 100 kHz. The comparison between measurements and finite element analysis validated both results.
Scanning thermal microscopy was used to measure the temperature and the electric potential distribution of the cross-section of an operating metal-oxide-silicon field-effect transistor (MOSFET). The temperature distributions were measured both in DC and AC modes in order to take account of the leakage current. The location of the maximum temperature was observed to approach the drain as the drain bias was increased.
6. 약 력 :
2001. 8. - 2003. 2. 기계·시스템디자인공학과, 홍익대학교, 전임강사
2003. 3. - 현재 기계공학과, 고려대학교, 조교수
7. 문 의 : 기계항공공학부 기창돈 교수 (☏ 880-1912)
서울대 BK21 기계분야사업단 행정실 (☏ 880-7132)
8. 기계분야 박사과정 세미나 수업 수강생 여러분들은 필히 참석해 주시고, 기타 관심있는 분들의 많은 참여를 부탁드립니다.
2. 연 사 : 권 오 명 교수 (고려대학교 기계공학과, 조교수)
3. 일 시 : 2003년 4월 4일 (금) 16:00 - 17:00
4. 장 소 : 서울대 신공학관(301동) 1512호 세미나실
한양대 공업센터 4층 세미나실 (화상강의로 진행)
5. 내 용 :
For thermal sensor fabrication, there are two important advantages in reducing the sizes of the thermal sensors, high sensitivity and spatial resolution. This talk is devoted to design and fabrication of micro thermal sensors and their applications in MEMS and microelectronic structures.
Utilizing the high temperature sensitivity of bi-material micro-cantilevers, an uncooled micro-optomechanical infrared camera was developed. A focal plane array (FPA) whose design is based on thermal and mechanical optimization was fabricated using standard surface micromachining techniques. An optical readout that simultaneously measures deflections of the cantilever in all pixels with nanometer resolution and projects an intensity map on to our eye was developed.
A new non-destructive evaluation (NDE) technique of sub-surface structure on the sub-micrometer scale using thermal waves was developed. First, the validity and accuracy of the technique was established. Then, the technique was applied to the non-destructive evaluation (NDE) of sub-surface structure at sub-micrometer scale resolution. To demonstrate the effectiveness of the technique the phase lag and amplitude distributions on a sample containing two levels of metal interconnect bridged by a via were measured with wave frequencies up to 100 kHz. The comparison between measurements and finite element analysis validated both results.
Scanning thermal microscopy was used to measure the temperature and the electric potential distribution of the cross-section of an operating metal-oxide-silicon field-effect transistor (MOSFET). The temperature distributions were measured both in DC and AC modes in order to take account of the leakage current. The location of the maximum temperature was observed to approach the drain as the drain bias was increased.
6. 약 력 :
2001. 8. - 2003. 2. 기계·시스템디자인공학과, 홍익대학교, 전임강사
2003. 3. - 현재 기계공학과, 고려대학교, 조교수
7. 문 의 : 기계항공공학부 기창돈 교수 (☏ 880-1912)
서울대 BK21 기계분야사업단 행정실 (☏ 880-7132)
8. 기계분야 박사과정 세미나 수업 수강생 여러분들은 필히 참석해 주시고, 기타 관심있는 분들의 많은 참여를 부탁드립니다.
