Department News
Thermal Design, Fabrication, and imaging of MEMS and Microelectronic
Seminar Date
2001-03-21
Author
손문숙
Date
2001-03-21
Views
973
1. 제 목 : Thermal Design, Fabrication, and imaging of MEMS and Microelectronic
structrues
2. 연 사 : Ohmyoung Kwon, Ph.D
1986.3-1990.2 Seoul National University B.S in Mechanical Engineering
1990.3-1992.2 Seoul National University M.S in Mechanical Engineering
1995.8-2000.12 University of California, Berkelely Ph.D in
Mechanical Engineering
4. 일 시 :2001년 1월 8일(월) 16:00-18:00
5. 장 소 :301동 1512호
6. 내 용 : For thermal sensor fabrication, there are two important advantages in reducing the sizes of the thermal sensors, high sensitivity and spatial resolution. This talk is devoted to design and fabrication of micro thermal sensors and their applications in MEMS and microelectronic structures. Utilizing the high temperature sensitivity of bi-material micro-cantilevers, an uncooled micro-optomechanical infrared camera was developed. A focal plane array (FPA) whose design is based on thermal and mechanical optimization was fabricated using standard surface micromachining techniques. An optical readout that simultaneously measures deflections of the cantilever in all pixels with nanometer resolution and projects an intensity map on to our eye was developed. A new non-destructive evaluation (NDE) technique of sub-surface structure on the sub-micrometer scale using thermal waves was developed. First, the validity and accuracy of the technique was established. Then, the technique was applied to the non-destructive evaluation (NDE) of sub-surface structure at sub-micrometer scale resolution. To demonstrate the effectiveness of the technique the phase lag and amplitude distributions on a sample containing two levels of metal interconnect bridged by a via were measured with wave frequencies up to 100 kHz. The comparison between measurements and finite element analysis validated both results. Scanning thermal microscopy was used to measure the temperature and the electric potential distribution of the cross-section of an operating metal-oxide-silicon field-effect transistor (MOSFET). The temperature distributions were measured both in DC and AC modes in order to take account of the leakage current. The location of the maximum temperature was observed to approach the drain as the drain bias was increased.
7. 문 의 : 기계항공공학부 유 정 열 교수 (880-7112)
structrues
2. 연 사 : Ohmyoung Kwon, Ph.D
1986.3-1990.2 Seoul National University B.S in Mechanical Engineering
1990.3-1992.2 Seoul National University M.S in Mechanical Engineering
1995.8-2000.12 University of California, Berkelely Ph.D in
Mechanical Engineering
4. 일 시 :2001년 1월 8일(월) 16:00-18:00
5. 장 소 :301동 1512호
6. 내 용 : For thermal sensor fabrication, there are two important advantages in reducing the sizes of the thermal sensors, high sensitivity and spatial resolution. This talk is devoted to design and fabrication of micro thermal sensors and their applications in MEMS and microelectronic structures. Utilizing the high temperature sensitivity of bi-material micro-cantilevers, an uncooled micro-optomechanical infrared camera was developed. A focal plane array (FPA) whose design is based on thermal and mechanical optimization was fabricated using standard surface micromachining techniques. An optical readout that simultaneously measures deflections of the cantilever in all pixels with nanometer resolution and projects an intensity map on to our eye was developed. A new non-destructive evaluation (NDE) technique of sub-surface structure on the sub-micrometer scale using thermal waves was developed. First, the validity and accuracy of the technique was established. Then, the technique was applied to the non-destructive evaluation (NDE) of sub-surface structure at sub-micrometer scale resolution. To demonstrate the effectiveness of the technique the phase lag and amplitude distributions on a sample containing two levels of metal interconnect bridged by a via were measured with wave frequencies up to 100 kHz. The comparison between measurements and finite element analysis validated both results. Scanning thermal microscopy was used to measure the temperature and the electric potential distribution of the cross-section of an operating metal-oxide-silicon field-effect transistor (MOSFET). The temperature distributions were measured both in DC and AC modes in order to take account of the leakage current. The location of the maximum temperature was observed to approach the drain as the drain bias was increased.
7. 문 의 : 기계항공공학부 유 정 열 교수 (880-7112)
