세미나 및 이벤트
Applications of Nano-Cluster Ion Beam in Surface Modification and Ultra Shallow
세미나 날짜
2004-01-25
작성자
김성돈
작성일
2004-01-25
조회
1237
1. 제 목 : Applications of Nano-Cluster Ion Beam in Surface Modification
and Ultra Shallow Junction Formation
2. 연 사 : Dr. W. K. Choi (최원국), Thin Film Technology Research Center, KIST
3. 일 시 : 2002년 10월 11일 (금) 14:00 - 15:30
4. 장 소 : 서울대 신공학관(301동) 117호 세미나실
5. 내 용 :
Gas cluster ion beam with a few nm size was generated by an adiabatic expansion through Laval nozzle. The existence and the mean size distribution of the cluster were analyzed by time-of-flight measurement and observation of induced hillocks with a few and a few tens nm size by an atomic force microcopy. CO2 cluster ion was irradiated on Si at 50 kV with the variations of ion dose from 1010-1013 cluster ions (CI)/cm2, at the flux of 109/cm2 s. Through this isolated cluster ion impact, the interaction mechanism between cluster ion with solid surface was suggested to be made of three steps: surface embossment, surface sputtering and smoothing, and surface etching. When cluster ion beam impinged on ITO/glass at 25 kV, the surface roughness ITO became very smooth from 1.3 nm to 0.92 nm after ion dose of 1014 CI/cm2. Also stress released Si3N4 film for base material for MEMS was irradiated by CO2 cluster ion beam, in which Cr metal deposited on Si3N4 was used for metal mask. After irradiation of 1014 CI/cm2, Si3N4 was etched as deep as 30 nm and the surface roughness of etched surface was changed from 1.1 nm to atomically flat as much as 0.16 nm. Decaborane (B10H14) cluster ion was implanted on n-Si at 5-10 kV and the sample was annealed for 10 s in N2 at 800-1000°C. From the SIMS depth profile, 11B was not diffuse into the depth deeper than 40 nm even after rapid thermal annealing at 900°C. All the samples showed the hole concentration higher than 1019/cm2 and much lower leakage current density than 10-4 A/cm2. This means that ultra shallow junction of p+/n channel was successfully formed by decaborane cluster ion implantation showing little transient enhanced diffusion (TED).
6. 약력 및 수상 경력 :
1980-1984 연세대, 물리학과, 이학사
1984-1986 연세대, 응용물리, 이학석사
1986-1993 연세대, 표면물리, 이학박사
1993-1994 Univerity of Oregon, post-doc
1994-1996 KIST, Divsion of Ceramics, post-doc
1996-현재 KIST, 재료연구부/박막기술연구센터, 책임연구원
7. 문 의 : 기계항공공학부 김 용 협 교수 (☏ 880-7385)
and Ultra Shallow Junction Formation
2. 연 사 : Dr. W. K. Choi (최원국), Thin Film Technology Research Center, KIST
3. 일 시 : 2002년 10월 11일 (금) 14:00 - 15:30
4. 장 소 : 서울대 신공학관(301동) 117호 세미나실
5. 내 용 :
Gas cluster ion beam with a few nm size was generated by an adiabatic expansion through Laval nozzle. The existence and the mean size distribution of the cluster were analyzed by time-of-flight measurement and observation of induced hillocks with a few and a few tens nm size by an atomic force microcopy. CO2 cluster ion was irradiated on Si at 50 kV with the variations of ion dose from 1010-1013 cluster ions (CI)/cm2, at the flux of 109/cm2 s. Through this isolated cluster ion impact, the interaction mechanism between cluster ion with solid surface was suggested to be made of three steps: surface embossment, surface sputtering and smoothing, and surface etching. When cluster ion beam impinged on ITO/glass at 25 kV, the surface roughness ITO became very smooth from 1.3 nm to 0.92 nm after ion dose of 1014 CI/cm2. Also stress released Si3N4 film for base material for MEMS was irradiated by CO2 cluster ion beam, in which Cr metal deposited on Si3N4 was used for metal mask. After irradiation of 1014 CI/cm2, Si3N4 was etched as deep as 30 nm and the surface roughness of etched surface was changed from 1.1 nm to atomically flat as much as 0.16 nm. Decaborane (B10H14) cluster ion was implanted on n-Si at 5-10 kV and the sample was annealed for 10 s in N2 at 800-1000°C. From the SIMS depth profile, 11B was not diffuse into the depth deeper than 40 nm even after rapid thermal annealing at 900°C. All the samples showed the hole concentration higher than 1019/cm2 and much lower leakage current density than 10-4 A/cm2. This means that ultra shallow junction of p+/n channel was successfully formed by decaborane cluster ion implantation showing little transient enhanced diffusion (TED).
6. 약력 및 수상 경력 :
1980-1984 연세대, 물리학과, 이학사
1984-1986 연세대, 응용물리, 이학석사
1986-1993 연세대, 표면물리, 이학박사
1993-1994 Univerity of Oregon, post-doc
1994-1996 KIST, Divsion of Ceramics, post-doc
1996-현재 KIST, 재료연구부/박막기술연구센터, 책임연구원
7. 문 의 : 기계항공공학부 김 용 협 교수 (☏ 880-7385)
